| Time | Monday, December 17, 2007 | ||||
| 9:00 | Inaugural Session | ||||
| 9:30 | P1: Prof. F. Capasso, Harvard University: Quantum Cascade Lasers: Design, Technology and commercialization | ||||
| 10:15 | P2: Prof. A.S. Vengurlekar, TIFR, India: Ultrafast Processes in Semiconductors | ||||
| 11:00 | TEA/COFFEE | ||||
| 11:30 | Silicon: 1 | Compound Semiconductors: 1 | Power Devices: 1 | Emerging Technologies: 1 | Industry |
| Gate stack | III-V materials/devices | Session 1 | |||
| 11:30 | Si-Inv-1: K. Shiraishi | CMP-Inv-1: R. Muralidharan | PWR-Inv-1: L. Lorenz | ET-Inv-1: J. Chevallier | |
| Hf based high K dielectrics | MMIC Technology | Key Power Semiconductor Development trends | n Type Doping of Diamond | ||
| 12:00 | Si-Inv-2: V. Narayanan | CMP-Inv-2: S. Dhar | PWR-Inv-2: W. Tung Ng | ET-Inv-2: S. Mhaisalkar | |
| High K dielectrics with metal gates | Dilute Nitrides grown by LPE | Low Voltage Power Devices | Detection of Biomolecules by CNT Transistors | ||
| 12:15 | |||||
| 12:30 | Si-C-1-71: S.K. Ray | CMP-C-1-75: B.Nicolae | PWR-C-1-151: S. Srikanth | ET-C-1-112: A.A. Orouji | |
| Ferroelectric-gate FETs | Double-barrier HBV | Charge sheet superjunction | High K dielectrics on CNT transistor | ||
| 12:45 | Si-C-2-131: M.K. Bera | CMP-C-2-73: V. Dixit | |||
| High k dielectrics on Ge | GaAs/AlGaAs QWIP | ||||
| 13:00 | LUNCH | ||||
| 14:30 | Silicon: 2 | Compound Semiconductors: 2 | Photovoltaics | Emerging Technologies: 2 | Industry |
| SiGe devices | III-Nitrides: 1 | Session-2 | |||
| 14:30 | SI-Inv-3: V. Tewary | CMP-Inv-3: E. Kohn | PV-Inv-1: N. Patibandla | ET-Inv-3: V.D. Vankar | Suneet Tyagi |
| Point Defects in strained Si | InAlN barrier HEMTs | Next generation PV devices | CNT field emitters | Intel | |
| 15:00 | Si-Inv-4 : C.K. Maiti | CMP-Inv-4: S. Arulkumaran | PV-Inv-2: P.S. Dutta | ET-C-2 -136: Padmanabh Rai | |
| Strained Si FET | Passivation of AlGaN/GaN HEMTs | High efficiency PV and TPV Technologies | Field Emission from CNTs made with PECVD | ||
| 15:15 | ET-C-3-173: S. Srivastava | ||||
| Effect of Catalyst Film Thickness on Field Emission from CNTs | |||||
| 15:30 | Si-C-3-109: N. Patel | CMP-Inv-5: S. Ghosh | PV-C-1-197: P.K. Basu | ET-C-4-337: A. Rudzinski | |
| Tunnel FET using a SiGe Source | Non-polar group-III nitride devices | New Texturization process for Si PV | 3D PDMS Nano templates for UV lithography | ||
| 15:45 | Si-C-4-110: S. Mahato | ET-C-5-328: K. Kumari | |||
| Strained-Si n-MOSFETs at Low Temp | Novel synthesis for CdSe Quantom Dots | ||||
| 16:00 | TEA/COFFEE | ||||
| 16:30 | Power Devices: 2 | Compound Semiconductors: 3 | Organic Semiconductors: 1 | MEMS:1 | Industry |
| Silicon Power Devices | Spin Transport | Sensors and Actuators | Session-3 | ||
| 16:30 | PWR-Inv-3: V. Benda | CMP-Inv-6: A. Ghosh | OSC-Inv-1: W. Fix | MEMS-Inv-1:Y. Perriard | (Nanofabrication |
| Carrier lifetimes in Power devices | Tunable spin-FET | Polymer based RFID | Self sensing drivers for MEMS | - Organized by Raith) | |
| 17:00 | PWR-Inv-4: A. Nagakawa | CMP-Inv-7: B. Pal | OSC-Inv-2: Deepak | MEMS-Inv-2: H. Saha | |
| Material Limits for Si Power devices | Nuclear spin effects in InP Quantum Dots | Full Colour Passive Matrix Display | MEMS based methane sensors | ||
| 17:30 | PWR-Inv-5: I.Takata | CMP-C-3-153: A. Joshua | OSC-Inv-3: J. Guo | MEMS-Inv-3: H. Shea | |
| Cosmic ray failure in power devices | Spin-polarized GaAs | Nanoimprint Technology | MEMS based propulsion for small spacecraft | ||
| 17:45 | CMP-C-4: O.V.S.N. Murthy | ||||
| Magnetotransport in MCT | |||||
| 18:00 | OSC-C-1-117: Pankaj Singh | MEMS-C-1-105: S. Chandra | |||
| PANI Electrochemistry | Al203 for MEMS | ||||
| 18:15 | OSC-C-2-300: D. Datta | MEMS-C-2-142: R. Singh | |||
| Blended CuPc: C60 solar cells | ZnO films | ||||
| Time | Tuesday, December 18, 2007 | ||||
| 9:30 | P3: Prof. Chenming Hu, University of California, Berkeley: New CMOS Devices, Modeling and Technology | ||||
| 10:15 | P4: Prof. Nitin Samarth, Penn State University: Controlling spins in semiconductor devices | ||||
| 11:00 | TEA/COFFEE | ||||
| 11:30 | PLENARY SESSION ON TECHNOLOGY and MANUFACTURING | ||||
| 11:30 | Dr. S. Guha, United Solar Ovonic Corporation,USA: Manufacturing of thin film silicon solar panels | ||||
| 12:00 | Dr. Omkaram Nalamasu, Applied Materials, U.S.A.: Nano manufacturing for Electronics and Energy | ||||
| 12:30 | Dr. Y. Ukai Sony Corp., Japan: TFT-LCD Manufacturing Technology | ||||
| 13:00 | LUNCH | ||||
| 14:30 | POSTER SESSION: 1 | Industry Session-4 | |||
| 15:45 | (Semiconductor Manufacturing India's Role - Organized by Applied Materials) | ||||
| 16:00 | TEA/COFFEE | ||||
| 16:30 | Silicon: 3 | Power Devices: 3 | Organic Semiconductors: 2 | MEMS: 2 | Industry Session-5 |
| Modeling | Wide Band Gap Semiconductors | Bio-MEMs | (Catalyzing the | ||
| 16:30 | SI-Inv-5: Josef Watts | PWR-Inv-6: G. Amaratunga | OSC-Inv-4: C. Adachi | MEMS-Inv-4: S. Buttgenbach | Demand for |
| Modelling circuit variability | Diamond Schottky barrier power devices | Organic Semiconductor LEDs | Chemical and Bio MEMS | Solar PV in India | |
| 17:00 | Si-Inv-6: Jagadesh Kumar | PWR-Inv-7: P.A. Mawby | OSC-Inv-5: J. de Mello | MEMS-Inv-5: A. Seshia | - Organized by |
| Nanoscale MOSFETS | Si-SiC Heterojunction diodes | Role and Use of PEDOT | Resonance in MEMS | Applied Materials) | |
| 17:30 | Si-C-5-57: K. Tantwai | PWR-Inv-8: I. Omura | OSC-C-3-69: Debdutta Ray | MEMS-Inv-6: M. Tartagni | |
| PIN modelling at microwave frequencies | GaN Power HEMTS | Photoconductivity in blends | Devices for Single Molecule detection | ||
| 17:45 | Si-C-6-45: R.S. Gupta | OSC-C-4-128: S. Sahu | |||
| ISEGaS deca nm MOSFET | Organic Photodetectors | ||||
| 18:00 | Si-C-7-149: A.A. Orouji | OSC-C-5-199: S.P. Singh | MEMS-C-3-272: R.E. Fernandez | ||
| Quantum simulation of MOSFETs | F4 CuPC OTFT | Triglyceride Sensor | |||
| 18:15 | Si-C-8-53: R. Thakker | ||||
| PSP MOSFET Model | |||||
| 19:30 | Banquet | ||||
| Time | Wednesday, December 19, 2007 | ||||
| 9:30 | P5: Prof. Asif Khan, University of South California: AlGaN Based UV LEDs and High Frequency Transistors | ||||
| 10:15 | P6: Dr. Simon Deleonibus LETI, CEA, Grenoble France: Nanoelectronics Devices for the End of the Roadmap and Beyond | ||||
| 11:00 | TEA/COFFEE | ||||
| 11:30 | Silicon: 4 | Compound Semiconductors: 4 | Power Devices: 4 | Modeling | Industry Session-6 |
| Modeling | Nitride Devices | ||||
| 11:30 | SI-Inv-7: E. Sangiorgi | CMP-Inv-8: T. Ganguli | PWR-Inv-9: G. Majumdar | Mod-Inv-1: P.K. Basu | S1: IBM |
| Monte Carlo Modelling of nm scale MOSFET | High Res. XRD of InN epi layers | Recent Technologies for Power Devices | Spice Models for SOA | S2: Infineon | |
| 12:00 | Si-Inv-8: B. Dierickx | CMP-C-5-284: Z. Mahmood | PWR-Inv-10: H. Ohashi | Mod-C-1-67: Sanjeev | S3 |
| Propagating variability from technology to system | Characteristics of Ni-GaN and n+ InN-GaN Interface | Design platform approach for future power converters | High carrier injection in DH LED | ||
| CMP-C-6: S. Rajan | Mod-C-2-155: R. Chaujar | ||||
| 12:15 | N-polar GaN Electronics | 3D Modeling & simulation of AlGaN/GaN MODFET | |||
| 12:30 | Si-C-9-287: C.R. Manoj | PWR-Inv-11: K. Shenai | |||
| Bulk vs SOI FINFET | Grand Challenges in Power | ||||
| 12:45 | Si-C-10-168: M.B. Tayel | ||||
| SiC Schottky barrier modelling | |||||
| 13:00 | LUNCH | ||||
| 14:30 | POSTER SESSION: 2 | Indian | |||
| 14:30 | Nanoelectronics | ||||
| 15:45 | Users' Prog. | ||||
| 16:00 | TEA/COFFEE | ||||
| 16:15 | Silicon: 5 | Compound Semiconductors: 5 | Organic Semiconductors: 3 | MEMS: 3 | |
| Reliability | Nanowires | RF/Communications | |||
| 16:30 | SI-Inv-9: H. Gossner | CMP-Inv-9: M. Borgstrom | OSC-Inv-6: K.S. Narayan | MEMS-Inv-7: S.K. Koul | |
| ESD protection Devices | Vertical Nano Wire devices | Scanning probe photo current microscopy | RF Components using MEMS Technology | ||
| 17:00 | Si-Inv-10: K. N. Bhat | CMP-Inv-10: M. Gao | OSC-Inv-7: S.S.K. Iyer | MEMS-Inv-8: S. Kal | |
| Thin nitrided gate oxides | Nano wire Optoelectronics | Bulk HJ solar Cells | Silicon accelerometer | ||
| 17:30 | Si-Inv-11: B. Rajendran | CMP-C-7-90: S.K. Ray | OSC-Inv-8: A. Dodaballapur | MEMS-C-4-264: S. Bhattacharya | |
| Phase Change memory | Composition modulated Ge Nano Wires | Organic and Polymer Transistors | Variable Optical Attenuator | ||
| 17:45 | CMP-C-8-331: S. Bhunia | MEMS-C-5-327: P. Suryanarayana | |||
| Growth of Wurtzite InP Nano wires | GaAs based RF MEMS | ||||
| 18:00 | Si-C-11:-94: P. Samantha | CMP-C-9-16: T. Maiti | MEMS-C-6-252: S. Somashekara Bhat | ||
| Gate dielectric stack reliabilty analysis | Heat transfer in Nano Wires | Electrical Measurement of Undercut in Surface MEMS | |||
| 18:15 | CMP-C-10-184: G. Shmavoyan | MEMS-C-7:327: S.P. Vudathu | |||
| SEM/FIB of nanowires | Parametric Yield Analysis on FEM based MEMS Designs | ||||
| Time | Thursday, December 20, 2007 | ||||
| 9:30 | P7: Prof. S.R. Forrest, Univesity of Michigan: Electronics on plastic- A solution to the energy challenge, or a pipe dream? | ||||
| 10:15 | P8: Prof. C.K.N.Patel, Pranalytica, Inc., California: Quantum cascade lasers for the detection of explosives and chemicals | ||||
| 11:00 | TEA/COFFEE | ||||
| 11:30 | Silicon: 6 | Compund Semiconductors: 6 | Nuts and Bolts | Nuts and Bolts | |
| Modeling | High Frequency | Modeling, Simulation | Processing, Nano, MEMS | ||
| 11:30 | SI-Inv-12: A. DasGupta | CMP-Inv-11: G. Doehler | |||
| Multi gate transistor modelling | CW THz generation | ||||
| 12:00 | Si-C-12: 161: K.N. Manjularani | CMP-C-11-310: S. Prabhu | |||
| Simulation Methodology for Operational Life Time Study Using NBTI Model | THz emission from ZnTe | ||||
| 12:15 | Si-C-13: 158: A. Mallik | CMP-C-12:144: S. Pattanaik | |||
| SOI CMOS for Analog | SiC vs. GaN at 140GHz | ||||
| 12:30 | Si-Inv-13: Rajeewa Arya | CMP-C-13-270: M. Mukherjee | |||
| Challenges in Large Area a-Si:H Solar Cells | THz InP IMPATT | ||||
| 12:45 | CMP-C-14: P. Vasa | ||||
| Surface Plasmons in semiconductors | |||||
| 13:00 | LUNCH | ||||
| 14:30 | WRAP UP SESSION | ||||
| 15:30 | TEA/COFFEE | ||||